IRFB4227PBF

  1. Brand New and Original.
  2. Fast Delivery and Low MOQ.
  3. 90 Days Guarantee for Money Back.
  4. One Stop Electronic Components Service.
  5. PCB & PCB Assembly.
  6. 7/24 Hours Service and Worldwide Shipping.

Email: Sales@tf-elec.com ( Datasheet and Price)

  • Check Mark New and Original 100%
  • Check Mark 90 Days Money Refund
  • Check Mark 70000+ Various Stocks
  • Check Mark Fast Delivery within 3-5 days.

Description

Part Number Infineon MOSFET N-CH 200V 65A TO220AB IRFB4227PBF
Contact Sales@tf-elec.com
Description N-Channel 200 V 65A (Tc) 330W (Tc) Through Hole TO-220AB
Mfr Infineon Technologies
Series HEXFET®
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current – Continuous Drain (Id) @ 25掳C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V
Vgs (Max)   ±30V
Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 25 V
Power Dissipation (Max) 330W (Tc)
Operating Temperature  -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

 

Reviews

There are no reviews yet.

Be the first to review “IRFB4227PBF”

Your email address will not be published. Required fields are marked *